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IRGP6690DPbF Datasheet, International Rectifier

IRGP6690DPbF transistor equivalent, insulated gate bipolar transistor.

IRGP6690DPbF Avg. rating / M : 1.0 rating-12

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IRGP6690DPbF Datasheet

Features and benefits

Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive.

Application


* Welding
* H Bridge Converters IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast S.

Image gallery

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TAGS

IRGP6690DPbF
Insulated
Gate
Bipolar
Transistor
IRGP6690D-EPbF
IRGP6630D-EPbF
IRGP6630DPbF
International Rectifier

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